Thermoelectric properties of skutterudite CoSb3 thin films
Thermoelectric properties of skutterudite CoSb3 thin films
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DOI：
10.1063/1.4963111
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发表时间：
2016-09-28
影响因子：
3.2
通讯作者：
Albrecht, M.
中科院分区：
文献类型：
--
作者：
Daniel, M. V.;Lindorf, M.;Albrecht, M.
研究了不同Sb含量、厚度为30 nm的Co-Sb薄膜的热电性能，研究了薄膜的组成和相应的结构性能。这些薄膜是通过分子束沉积制备的，或者通过在加热的基底上共沉积或室温沉积，然后进行后退火步骤。研究发现所制备的薄膜表现出双极传导，表现为正霍尔常数和负塞贝克系数。假设重电子和轻空穴，使用双极模型可以很好地解释所得到的结果，并最终通过制备p型和n型掺杂CoSb3薄膜得到实验证实。此外，通过温度依赖性传输测量将可变范围跳跃确定为低温下的主要传导机制。由 AIP 出版社出版。
The thermoelectric properties of Co-Sb thin films with different Sb content and with a thickness of 30 nm were investigated with respect to the composition and the corresponding structural properties of these films. The films were prepared by molecular beam deposition either by codeposition on heated substrates or room temperature deposition followed by a post-annealing step. It was found that the prepared films exhibit bipolar conduction, indicated by a positive Hall constant and a negative Seebeck coefficient. The obtained results can be well explained by using the bipolar model, assuming heavy electrons and light holes, which was finally confirmed experimentally by the preparation of p-and n-type doped CoSb3 thin films. Furthermore, variable range hopping was identified by temperature dependent transport measurements as dominant conduction mechanism at low temperatures. Published by AIP Publishing.