A FinFET with one atomic layer channel
A FinFET with one atomic layer channel
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具有一个原子层通道的 FinFET
DOI：
10.1038/s41467-020-15096-0
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发表时间：
2020-03-05
影响因子：
16.6
通讯作者：
Han, Zheng
中科院分区：
文献类型：
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作者：
Chen, Mao-Lin;Sun, Xingdan;Han, Zheng
自20世纪60年代发明以来，金属氧化物半导体场效应晶体管(MOS-FET)最重要的发展之一将是三维版本，它使半导体沟道垂直地被共形栅电极包裹，也被认为是FinFET。在过去的几十年里，FinFET中的鳍片(W)的宽度已经从大约150 nm缩小到几纳米。然而，由于光刻精度的限制，近几年来WW似乎一直趋于平稳。在这里，我们展示了采用模板生长方法，垂直分离不同类型的单层二维晶体。在此基础上，得到了具有一个原子层鳍片的FinFET，其通断比达到。我们的发现将FinFET的鳍宽推到了1 nm以下，并可能为下一代纳米电子学提供更高的集成度和更低的功耗。
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W) in FinFETs has shrunk from about 150 nm to a few nanometers. However,Wseems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching. Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.