Understanding the limits of a hall sensor sensitivity for integration on a GaN power transistor chip: experiments with market available components
Understanding the limits of a hall sensor sensitivity for integration on a GaN power transistor chip: experiments with market available components
复制标题
了解集成在 GaN 功率晶体管芯片上的霍尔传感器灵敏度的限制：使用市场上可用的组件进行实验
DOI：
10.1049/icp.2023.2022
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Marsic V
中科院分区：
文献类型：
--
作者：
Marsic V
氮化镓(GaN)是一种新兴的电力电子宽禁带技术。与其他广泛使用的技术相比，它可以实现更高的功率密度、更宽的工作温度范围和更高的效率，从而实现系统级的小型化和整体重量和成本的降低。相比之下，这项技术会产生高水平的无线电辐射，而且由于其对不匹配的电气参数的敏感性，如果没有足够的有功功率监测，它很容易发生故障。由于介入式监测可能会破坏晶体管的功率传输效率，电偶隔离传感器的目标是在难以制造的GaN结构上实现芯片级集成。实验结果表明，在GaN晶体管芯片上集成的功率监测场景中，要求最小磁场阈值为1mT的霍尔传感器将是足够的。噪声GaN晶体管环境在1、5和10 kHz三种不同的低功率负载下进行了测试，结果表明辐射发射与负载电流有关，而不是与电压有关，而霍尔器件的测量结果显示出稳定性和一致性。
Gallium Nitride (GaN) is an emerging wide bandgap technology in power electronics. It enables higher power density, wider operating temperature range and higher efficiency compared to other widely used technologies, allowing miniaturization and overall weight and cost reductions at system level. In contrast, the technology produces high levels of radio emissions and it is prone to failure without an adequate active power monitoring due to its sensitivity to unmatched electrical parameters. Since intrusive monitoring can disrupt the transistor's efficiency on power delivery, galvanic isolated sensors are intensely explored with the goal of chip-level integration on the difficult-to-manufacture GaN structures. The experimental results in this study reveal that in a power monitoring scenario envisaged for the integration on a GaN transistor chip, a Hall sensor that requires a minimum magnetic field threshold of 1 mT will be sufficient. The noisy GaN transistor environment is tested for three different low power loads, resistive, semi-conductive, and inductive, at 1, 5 and 10 kHz, demonstrating that the radiated emissions relate to the load current rather than voltage, whereas the Hall device measurements show stability and consistency.