Transport properties of Mn δ-doped GaAs and the effect of selective doping
Transport properties of Mn δ-doped GaAs and the effect of selective doping
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DOI：
10.1063/1.1473878
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发表时间：
2002-04
影响因子：
4
通讯作者：
A. M. Nazmul;S. Sugahara;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
A. M. Nazmul;S. Sugahara;Masaaki Tanaka
我们用分子束外延法在GaAs（001）衬底上生长了Mn δ掺杂的GaAs层。二次离子质谱和透射电子显微镜显示，锰掺杂剂突然限制。即使在高达400 °C的升高的生长温度下，掺杂分布仍然保持非线性。Mn δ掺杂的GaAs样品在低温下表现出高电阻率，没有表现出铁磁行为。而在选择性掺杂的异质结（Mn δ掺杂GaAs /Be掺杂AlGaAs）中，当空穴由Be掺杂AlGaAs层提供时，观察到了铁磁有序结构，其铁磁转变温度高达70 K。
We have grown Mn δ-doped GaAs layers on GaAs(001) substrates by molecular beam epitaxy. Secondary ion mass spectroscopy and transmission electron microscopy revealed that Mn dopants were abruptly confined. The doping profiles still retained abruptness even at elevated growth temperature up to 400 °C. Mn δ-doped GaAs samples showed high resistivity at low temperature and did not show a ferromagnetic behavior. However, in a selectively doped heterostructure (Mn δ-doped GaAs / Be-doped AlGaAs), where holes were supplied from the Be-doped AlGaAs layer, a ferromagnetic order was observed with the ferromagnetic transition temperature as high as 70 K.