Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
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DOI：
10.1016/j.carbon.2020.11.072
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发表时间：
2020-12
期刊：
影响因子：
10.9
通讯作者：
Xufang Zhang;Tsubasa Matsumoto;Y. Nakano;H. Noguchi;H. Kato;T. Makino;D. Takeuchi;M. Ogura;S. Yamasaki;C. Nebel;T. Inokuma;N. Tokuda
中科院分区：
文献类型：
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作者：
Xufang Zhang;Tsubasa Matsumoto;Y. Nakano;H. Noguchi;H. Kato;T. Makino;D. Takeuchi;M. Ogura;S. Yamasaki;C. Nebel;T. Inokuma;N. Tokuda
我们成功地在硅基衬底上异质外延生长的自支撑金刚石衬底上制备了反型p沟道金属氧化物半导体场效应晶体管（MOSFET）。测试了漏极电流-漏极电压（Ids-Vds）和漏极电流-栅极电压（Ids-Vgs）特性。最大漏极电流密度和峰值场效应迁移率（μFE）约为0.35 mA/mm和2.7 cm 2 V − 1 s −1，低于我们报道的在高压高温（HPHT）衬底上制备的同质外延金刚石MOSFET的结果。从亚阈值区提取的界面态密度（Dit）约为5.5 × 1012 cm − 2 eV −1，与我们报道的同质外延金刚石MOSFET的结果相当。为了进一步研究低μFE的原因，对异质外延金刚石MOSFET的n型体进行了原子力显微镜（AFM）测量，我们发现表面粗糙度远大于我们报道的同质外延金刚石MOSFET。可以推断，表面粗糙度将是异质外延金刚石MOSFET场效应迁移率的主要限制因素之一。不完美的金刚石异质外延也会降低场效应迁移率。本工作探索了反型p沟道异质外延金刚石MOSFET的潜力，这将有助于金刚石功率器件的实际应用。
We successfully fabricated the inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain current–drain voltage (Ids–Vds) and drain current–gate voltage (Ids–Vgs) characteristics were examined. The maximum drain current density and the peak field effect mobility (μFE) were around 0.35 mA/mm and 2.7 cm2V−1s−1, which were lower than our reported results of the homoepitaxial diamond MOSFETs fabricated on high-pressure, high-temperature (HPHT) substrates. The interface state density (Dit) extracted from the subthreshold region was around 5.5 × 1012cm−2eV−1, comparable to our reported results of the homoepitaxial diamond MOSFET. To further examine the reason for the lowμFE, atomic force microscopy (AFM) measurements were performed for the n-type body of the heteroepitaxial diamond MOSFET, and we found that the surface roughness was much larger than our reported ones of the homoepitaxial diamond MOSFET. It can be deduced that the surface roughness would be one main limiting factor for the field effect mobility of the heteroepitaxial diamond MOSFET. The imperfect diamond heteroepitaxy would also degrade the field effect mobility. This work explores the potential of the inversion-type p-channel heteroepitaxial diamond MOSFETs, which would facilitate the practical application of diamond power devices.