The growth mechanism and characterization of few-layer diphenyl dinaphthothienothiophene films prepared by vacuum deposition
The growth mechanism and characterization of few-layer diphenyl dinaphthothienothiophene films prepared by vacuum deposition
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真空沉积少层二苯基二萘并噻吩并噻吩薄膜的生长机理及表征
DOI:
10.1016/j.orgel.2019.07.014
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发表时间:
2019
影响因子:
3.2
通讯作者:
Kitamura Masatoshi
中科院分区:
文献类型:
--
作者:
Hattori Yoshiaki;Kimura Yoshinari;Yoshioka Takumi;Kitamura Masatoshi
The growth mechanism of 2,9-diphenyl-dinaphtho [2,3-b:2′,3′-f]thieno [3,2-b]thiophene (DPh-DNTT) thin-films prepared by vacuum deposition was investigated based on the morphological crystallinity of the obtained films. In addition to atomic force microscopy, which is commonly used for imaging surface morphology, optical microscopy was also positively used for the same purpose. The technique allows the quick and easy evaluation of thin films. The optical microscopy images show that DPh-DNTT films grew according to a layer-by-layer growth mode. Each layer grew as flat two-dimensional (2D) islands with a thickness of about 2.3 nm, where DPh-DNTT molecules stand almost vertically on the substrate. The height difference between layers provided a color contrast in these images, which visualizes the initial 2D island on the Si substrate with thermally grown SiO2and fractal-shape 2D islands on top surface. By using the method, a monolayer of isolated and round 2D islands, with a diameter of approximately 4 μm, formed at a high substrate temperature on a SiO2surface that had been previously treated with O2plasma or UV-O3. The presence of a DPh-DNTT layer on the substrate was also confirmed by micro-Raman measurement.