A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
复制标题
具有超浅结的自供电高性能石墨烯/硅紫外光电探测器:突破硅的极限?
DOI:
10.1038/s41699-017-0008-4
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发表时间:
2017-04-11
影响因子:
9.7
通讯作者:
Yu, Bin
中科院分区:
文献类型:
--
作者:
Wan, Xia;Xu, Yang;Yu, Bin
We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W−1), fast time response (5 ns), high specific detectivity (1.6 × 1013Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W−1in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and “dissipation-less” remote sensor networks.