Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies
Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies
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DOI：
10.1021/nl1006307
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发表时间：
2010-06-01
期刊：
影响因子：
10.8
通讯作者：
Atwater, Harry A.
中科院分区：
文献类型：
--
作者：
Feigenbaum, Eyal;Diest, Kenneth;Atwater, Harry A.
本文报道了一种在以导电氧化物为活性物质的金属-氧化物-半导体异质结的积累层中获得单位阶折射率变化的方法。在外加电场下，电介质/导电氧化物界面处的载流子浓度从1 × 10（21）/cm（3）增加到2.8 × 10（22）/cm（3），导致800 nm处的局部折射率变化为1.39。当该结构被建模为等离子体激元波导时，该变化对应于等离子体激元模式的0.08的模式折射率变化，
We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode,