Improving metal/semiconductor conductivity using AlO x interlayers on n-type and p-type Si
Improving metal/semiconductor conductivity using AlO x interlayers on n-type and p-type Si
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DOI：
10.1063/1.4892003
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发表时间：
2014-08
影响因子：
4
通讯作者：
P. King;E. Arac;S. Ganti;Kelvin S. K. Kwa;N. Ponon;A. O'Neill
中科院分区：
文献类型：
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作者：
P. King;E. Arac;S. Ganti;Kelvin S. K. Kwa;N. Ponon;A. O'Neill
采用热原子层沉积技术在n型和p型Si上形成金属/中间层/半导体欧姆接触中的超薄中间层。在金属化之前，在120 °C下在Si衬底上沉积厚度为l_2nm的AlOx，形成Ni/AlOx/Si接触。电导率提高了两个数量级，但接触仍然整流。当它们在200 °C下退火时，电导率增加另一个数量级，并且样品变为欧姆。对于基于轻掺杂（1015 cm−3）Si衬底的结构，获得了1.5 × 10−4 Ω-cm 2的最小比接触电阻率。现有的模型描述费米能级脱钉扎不完全解释我们的结果，但与文献中的其他实验数据一致。
Thermal atomic layer deposition was used to form ultra-thin interlayers in metal/interlayer/ semiconductor Ohmic contacts on n-type and p-type Si. AlOx of thickness 1–2 nm was deposited at 120 °C on Si substrates prior to metallization, forming Ni/AlOx/Si contacts. Conductivity improved by two orders of magnitude but the contacts remained rectifying. When they were annealed at 200 °C, the conductivity increased by another order of magnitude and the samples became Ohmic. A minimum specific contact resistivity of 1.5 × 10−4 Ω-cm2 was obtained for structures based on lightly doped (1015 cm−3) Si substrates. Existing models that describe Fermi level de-pinning do not fully explain our results, which are however consistent with other experimental data in the literature.