Role of the Spatial Distribution of Gas Flow for Tuning the Vertical/Planar Growth of Nonlayered Two-Dimensional Nanoplates
Role of the Spatial Distribution of Gas Flow for Tuning the Vertical/Planar Growth of Nonlayered Two-Dimensional Nanoplates
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气流空间分布对调节非层状二维纳米板垂直/平面生长的作用
DOI：
10.1021/acs.cgd.1c01261
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发表时间：
2021-12
影响因子：
3.8
通讯作者：
Fangping Ouyang
中科院分区：
文献类型：
--
作者：
Xukun Zhu;Lokwing Wong;Xiulian Fan;Jiong Zhao;Yu Zhou;Fangping Ouyang
尽管二维（2D）材料的取向生长控制的困难，由于表面能的各向异性大，在这里，我们提出了一个简单的生长策略，通过调整气流的空间分布，以调整非层状铬基硫属化物纳米片的垂直/平面生长。垂直生长成核行为与气体流量和前驱物浓度的分布直接相关，气体流量和前驱物浓度的分布是通过堆叠硅衬底来改变前驱物物种的输运行为而形成的。元素的生长步骤，包括成核，定向生长，和生长的样品和衬底之间的界面形成的特征在于通过电子显微镜，其结论是，成核的垂直纳米片是从随机预生长的多晶纳米晶体或从非晶缓冲层实现。纳米片的厚度和密度可以通过调节气流屏障的高度和生长条件来控制。此外，已经开发了一种静电辅助方法来将垂直生长的纳米片转移到任意表面，这可以保持与衬底的非常弱的相互作用，从而大大降低了来自衬底的电子影响。我们的研究结果不仅为二维材料提供了一种新的通用垂直/平面生长方法，而且还暗示了追求内在二维磁性的新可能性，并为探索各种二维磁性应用和高表面积衍生应用打开了大门。
Despite the difficulty in the orientational growth control for two-dimensional (2D) materials due to the large anisotropy of surface energy, here we propose a simple growth strategy by adjusting the spatial distribution of the gas flow to tune the vertical/planar growth of nonlayered Cr-based chalcogenide nanoplates. The vertical growth nucleation behaviors are directly related to the distribution of the gas flow and precursor concentration, which are formed by stacking silicon substrates to change the transportation behaviors of the precursor species. The elemental growth steps including nucleation, oriented growth, and the interface formation between the as-grown samples and substrates are characterized by electron microscopy, which concluded that the nucleation of the vertical nanoplates is either achieved from random pregrown polycrystalline nanocrystals or from the amorphous buffer layers. The thickness and density of the nanoplates can be controlled by tuning the height of the airflow barrier and growth conditions. Moreover, an electrostatic-assistance method has been developed to transfer the vertically grown nanoplates to arbitrary surfaces, which could retain very weak interaction with the substrate that largely reduces the electronic influence from the substrates. Our results not only provide a new universal vertical/planar growth method for 2D materials but also hint at a new possibility of pursuing intrinsic 2D magnetic properties and opening the door to explore various 2D magnetic applications and high surface-area-derived applications.
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