Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate
Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate
复制标题
谐振驱动硅二量子位量子门的性能评估
DOI：
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复制
发表时间：
2018
影响因子：
4.9
通讯作者：
Jing Guo
中科院分区：
文献类型：
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作者：
Tong Wu;Jing Guo
双量子比特量子门在量子计算中起着重要的作用，其运行关键取决于两个量子比特之间的纠缠。对基于硅双量子点的谐振驱动控制非门进行了理论研究。阐明了两个量子比特之间交换耦合的有效门调制的物理机制。研究了单重态-三重态能量分裂、门开关速度和门保真度随量子点间距和调制门电压的变化规律。结果表明，纠缠强度和门开关速度与量子点间距呈指数关系。约10 nm的小间距可以保证<1 ns的CNOT门延迟和存在退相干时的可靠门开关。结果表明，基于硅DQD的共振驱动双量子比特量子门具有良好的性能潜力。
Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are studied theoretically. The physical mechanisms for effective gate modulation of the exchange coupling between two qubits are elucidated. Scaling behaviors of the singlet-triplet energy split, gate-switching speed, and gate fidelity are investigated as a function of the quantum dot spacing and modulation gate voltage. It is shown that the entanglement strength and gate-switching speed exponentially depend on the quantum dot spacing. A small spacing of ~10 nm can promise a CNOT gate delay of <1 ns and reliable gate switching in the presence of decoherence. The results show promising performance potential of the resonantly driven two-qubit quantum gates based on aggressively scaled silicon DQDs.