Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki–Paoli Method
Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki–Paoli Method
复制标题
采用 Hakki-Paoli 方法测量高度堆叠 InGaAs 量子点激光器的增益
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
N. Yamamoto
中科院分区：
文献类型：
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作者：
F. Tanoue;H. Sugawara;K. Akahane;N. Yamamoto
采用超高速分子束外延技术制备了腔长为147 μ m、具有19层InGaAs量子点的半导体激光器，并采用Hakki-Paoli方法研究了其在111.5 mA阈值电流（Ith）以下的增益特性。在100.3 mA（0.9Ith）的注入电流下，正净模式增益在1005至1043 nm之间的范围内，对应于45 meV的光子能量。最大净模态增益和最大模态增益分别为46.5和60.5 cm-1。在阈值电流的0.77倍处观察到高达3.8 cm-1/mA的差分净模态增益。在阈值电流以下没有出现增益饱和，并且需要高于78.4 mA（0.7Ith）的注入电流来获得净模态增益。
A 147-µm-long cavity laser diode with 19 InGaAs quantum dot layers was fabricated by the ultrahigh-rate molecular beam epitaxial growth technique, and its gain properties were investigated using the Hakki–Paoli method below the threshold current (Ith) of 111.5 mA. At an injection current of 100.3 mA (0.9Ith), the positive net modal gain was in the range between 1005 and 1043 nm, corresponding to a photon energy of 45 meV. The maximum net modal gain and maximum modal gain were 46.5 and 60.5 cm-1, respectively. A differential net modal gain of as high as 3.8 cm-1/mA was observed at 0.77 times the threshold current. No gain saturation appeared below the threshold current, and injection currents higher than 78.4 mA (≈0.7Ith) were required to obtain a net modal gain.