Flame Detection by a β-Ga2O3-Based Sensor
Flame Detection by a β-Ga2O3-Based Sensor
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DOI：
10.1143/jjap.48.011605
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发表时间：
2009-01
影响因子：
1.5
通讯作者：
T. Oshima;T. Okuno;N. Arai;N. Suzuki;H. Hino;S. Fujita
中科院分区：
文献类型：
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作者：
T. Oshima;T. Okuno;N. Arai;N. Suzuki;H. Hino;S. Fujita
β-Ga 2 O3氧化物半导体由于其4.8eV的大带隙而具有天然的日盲灵敏度。为了评估其潜力，使用其导电单晶衬底，采用简单的方法，无需外延和真空工艺，制备了火焰探测器。该结构为聚（3，4-乙撑二氧噻吩）与聚苯乙烯磺酸（PEDOT-PSS）的肖特基接触/β-Ga_2 O_3半绝缘层/β-Ga_2 O_3 n型区/In欧姆接触。在250 ~ 300 nm波长范围内，探测器的光谱响应具有1.5 ×104的抑制比和18%的外量子效率。该装置成功地检测到火焰区分1.5 nW/cm 2的太阳盲光从火焰下的强烈荧光灯照明没有任何可见光截止滤波器。这一结果鼓励了实用的β-Ga 2 O3基火焰探测器的制造。
An oxide semiconductor of β-Ga2O3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT–PSS) Schottky contact/a semi-insulating layer of β-Ga2O3/n-type region of β-Ga2O3/an In ohmic contact. The spectral response of the detector exhibited a large 250-to-300-nm rejection ratio of 1.5 ×104 and an external quantum efficiency of 18% at 250 nm. The device successfully detected a flame by distinguishing 1.5 nW/cm2 solar-blind light from the flame under a strong fluorescent lamp illumination without any visible-cut filters. This result encourages the fabrication of practical β-Ga2O3-based flame detectors.