New yellow-emitting nitride phosphor SrAlSi4N7:Ce3+ and important role of excessive AlN in material synthesis.
New yellow-emitting nitride phosphor SrAlSi4N7:Ce3+ and important role of excessive AlN in material synthesis.
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DOI：
10.1021/am402612n
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发表时间：
2013-12
影响因子：
9.5
通讯作者：
Liangliang Zhang;Jiahua Zhang;Xia Zhang;Z. Hao;Haifeng Zhao;Yongshi Luo
中科院分区：
文献类型：
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作者：
Liangliang Zhang;Jiahua Zhang;Xia Zhang;Z. Hao;Haifeng Zhao;Yongshi Luo
报道了Ce（3+）掺杂SrAlSi4N7发黄荧光粉的合成及其发光性能。与YAG: Ce（3+）相比，该荧光粉具有更小的热猝灭性和更宽的以555 nm为中心的发射带，带宽可达115 nm，适合制作高显色性白光LED。在材料合成中观察到，只有在原料中AlN过量的情况下才能实现强发光。研究了过量AlN的作用。详细讨论了边共享[AlN4]四面体存在的机理，这是根据避铝原理不合理的。
Synthesis and luminescent properties of Ce(3+)-doped SrAlSi4N7 yellow-emitting phosphor are reported. In comparison with YAG: Ce(3+), the phosphor exhibits smaller thermal quenching and a broader emission band centering at 555 nm with a bandwidth as large as 115 nm, being suitable for fabricating high color rendering white LED. It is observed in material synthesis that intense luminescence can be achieved only in case of excessive AlN in the raw materials. The role of the excessive AlN is studied. The mechanism for existence of edge-sharing [AlN4] tetrahedral, which is unreasonable according to the aluminum avoidance principle, is discussed in detail.