Carrier Modulation of Ambipolar Few-Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping
Carrier Modulation of Ambipolar Few-Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping
复制标题
MgO 表面电荷转移掺杂双极少层 MoTe2 晶体管的载流子调制
DOI：
10.1002/adfm.201704539
复制
发表时间：
2018-04-11
影响因子：
19
通讯作者：
Qin, Shiqiao
中科院分区：
文献类型：
--
作者：
Luo, Wei;Zhu, Mengjian;Qin, Shiqiao
半导体二碲化钼（2 H-MoTe 2）是一种新兴的二维材料，具有适当的带隙和良好的载流子迁移率，被配置为场效应晶体管，并且是大量研究兴趣的焦点，显示出空穴主导的双极特性。在这里，载流子调制的双极少数层MoTe 2晶体管证明利用氧化镁（MgO）表面电荷转移掺杂。通过仔细调整MgO膜的厚度和MoTe 2层的数量，可以反向控制MoTe 2晶体管从p型到n型的载流子极性。掺杂37 nm MgO薄膜后，MoTe 2的电子迁移率从0.1 cm（2）V-1 s（-1）显著提高到20 cm（2）V-1 s（-1），表明电子输运得到了极大的改善。有效的载波调制使得能够实现具有>25的高DC增益的高性能互补逆变器和基于少层MoTe 2薄片的光电探测器。这些结果为实现基于二维过渡金属二硫族化物半导体的电子和光电器件提供了重要的进展。
Semiconducting molybdenum ditelluride (2H-MoTe2), a fast-emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field-effect transistors and is the focus of substantial research interest, showing hole-dominated ambipolar characteristics. Here, carrier modulation of ambipolar few-layer MoTe2 transistors is demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting the thickness of MgO film and the number of MoTe2 layers, the carrier polarity of MoTe2 transistors from p-type to n-type can be reversely controlled. The electron mobility of MoTe2 is significantly enhanced from 0.1 to 20 cm(2) V-1 s(-1) after 37 nm MgO film doping, indicating a greatly improved electron transport. The effective carrier modulation enables to achieve high-performance complementary inverters with high DC gain of >25 and photodetectors based on few-layer MoTe2 flakes. The results present an important advance toward the realization of electronic and optoelectronic devices based on 2D transition-metal dichalcogenide semiconductors.