Hydrogen diffusion in amorphous silicon
Hydrogen diffusion in amorphous silicon
复制标题
非晶硅中的氢扩散
DOI：
10.1080/13642818708221319
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
W. Jackson
中科院分区：
文献类型：
--
作者：
R. Street;C. Tsai;J. Kakalios;W. Jackson
用二次离子质谱法测量了155-300°C温度范围内掺杂和补偿a-Si：H中氢的扩散。在200°C时，掺杂降低了激活能，使扩散系数提高了3个数量级，并发现扩散系数与悬挂键密度之间存在相关性.对3种不同扩散模型的分析表明，氢对弱Si-Si键的破坏可能是一个重要的过程.讨论了扩散结果与电子结构热平衡之间的关系。在155-300°C温度范围内测量了a-Si：H中的氢扩散系数，特别强调了掺杂和补偿的影响。在所有情况下，DH以能量1[sdot]2-1[sdot]5 eV被热激活。扩散系数随时间缓慢下降，这是由于无序引起的变化的网站能量。我们发现D H是一个很好的...
Abstract Hydrogen diffusion in doped and compensated a-Si:H has been measured by secondary-ion mass spectrometry profiling in the temperature range 155-300°C. Doping reduces the activation energy and enhances the diffusion coefficient by up to three orders of magnitude at 200°C, and a correlation between the diffusion coefficient and the dangling-bond density is found. An analysis of three different diffusion models indicates that the breaking of weak Si – Si bonds by hydrogen may be an important process. The relation between the diffusion results and the thermal equilibration of the electronic structure is discussed. The hydrogen diffusion coefficient in a-Si:H has been measured over the temperature range 155-300°C, with particular emphasis on the effects of doping and compensation. In all cases D H is thermally activated with an energy 1[sdot]2-1[sdot]5 eV. The diffusion coefficient decreases slowly with time which is attributed to the disorder-induced variation in site energies. We find that D H is gre...