Numeric Optimization for Configurable, Parallel, Error‐Robust Entangling Gates in Large Ion Registers
Numeric Optimization for Configurable, Parallel, Error‐Robust Entangling Gates in Large Ion Registers
复制标题
大离子寄存器中可配置、并行、容错纠缠门的数值优化
DOI：
10.1002/qute.202000044
复制
发表时间：
2020
影响因子：
4.4
通讯作者：
H. Slatyer
中科院分区：
文献类型：
--
作者：
C. Bentley;H. Ball;M. Biercuk;A. Carvalho;M. Hush;H. Slatyer
研究了一类用于捕获原子离子的纠缠门，并展示了使用数值优化技术来创建各种快速，错误鲁棒的门结构。介绍了一种数值优化框架，其目标是对离子对、多离子寄存器、大型寄存器的多离子子集以及单个寄存器内的并行操作进行最大和部分纠缠操作。假设离子被单独寻址，从而允许对幅度和相位调制控制进行优化。计算和模拟表明，在Mølmer-Sørensen门中使用的双色驱动器的差相调制的包含允许在一系列门配置中进行近似时间最优控制，并且当与分析约束适当结合时，还可以提供对关键实验误差源的鲁棒性。进一步证明了耦合率界限或调制频带限制等实验约束对可实现性能的影响。使用基于TensorFlow的自定义优化引擎，对于最多20个离子的离子寄存器进行优化，还演示了使用本地实例笔记本电脑的数十分钟解决方案时间，允许计算访问与近期捕获离子设备相关的系统规模。
A class of entangling gates for trapped atomic ions is studied and the use of numeric optimization techniques to create a wide range of fast, error‐robust gate constructions is demonstrated. A numeric optimization framework is introduced targeting maximally‐ and partially‐entangling operations on ion pairs, multi‐ion registers, multi‐ion subsets of large registers, and parallel operations within a single register. Ions are assumed to be individually addressed, permitting optimization over amplitude‐ and phase‐modulated controls. Calculations and simulations demonstrate that the inclusion of modulation of the difference phase for the bichromatic drive used in the Mølmer–Sørensen gate permits approximately time‐optimal control across a range of gate configurations, and when suitably combined with analytic constraints can also provide robustness against key experimental sources of error. The impact of experimental constraints such as bounds on coupling rates or modulation band‐limits on achievable performance is further demonstrated. Using a custom optimization engine based on TensorFlow, for optimizations on ion registers up to 20 ions, time‐to‐solution of order tens of minutes using a local‐instance laptop is also demonstrated, allowing computational access to system‐scales relevant to near‐term trapped‐ion devices.
影响因子：
64.8
作者：
Figgatt, C.;Ostrander, A.;Monroe, C.
通讯作者：
Monroe, C.
影响因子：
64.8
作者：
Schafer, V. M.;Ballance, C. J.;Lucas, D. M.
通讯作者：
Lucas, D. M.