Displacement correlations in covalent semiconductors
Displacement correlations in covalent semiconductors
复制标题
共价半导体中的位移相关性
DOI：
10.1088/0022-3719/13/13/005
复制
发表时间：
1980
期刊：
影响因子：
--
通讯作者：
W. Weber
中科院分区：
文献类型：
--
作者：
O. H. Nielsen;W. Weber
使用绝热键电荷模型计算了共价半导体的位移-位移相关函数以及振动幅度和德拜温度。结果与壳模型和热容量以及X射线和穆斯堡尔数据进行了比较。计算径向和横向相关性。与最近的 EXAFS 结果非常吻合。给出了键长和键角的均方动态变形值，并将结晶锗的动态无序与非晶锗的静态无序进行了比较。
Displacement-displacement correlation functions as well as vibrational amplitudes and Debye temperatures were calculated for covalent semiconductors using the adiabatic bond charge model. The results were compared with the shell model and heat capacity as well as X-ray and Mossbauer data. Radial and transverse correlation were computed. Good agreement was found with recent EXAFS results. Values for the mean square dynamic deformations of the bond length and bond angles are presented and the dynamical disorder of crystalline germanium is compared with the static disorder of amorphous germanium.