Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
复制标题
利用聚焦离子束注入选择性无序制造折射率引导 AlGaAs MQW 激光器
DOI：
10.1143/jjap.25.l783
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发表时间：
1986
影响因子：
1.5
通讯作者：
H. Nakashima
中科院分区：
文献类型：
--
作者：
K. Ishida;T. Takamori;K. Matsui;T. Fukunaga;T. Morita;E. Miyauchi;H. Hashimoto;H. Nakashima
采用Be聚焦离子束（FIB）注入技术制备了埋层光波导（BOG）AlGaAs多量子阱（MQW）激光器。该工艺是基于这样的效果，其中Si掺杂的MQW的组成无序被抑制由Be离子注入和随后的退火。所提出的过程是非常简单的，不需要任何光刻程序。证实了所制作的激光器作为折射率引导激光器。该技术是光电子集成电路的一个有前途的新步骤。
AlGaAs multiquantum well (MQW) lasers with buried optical guide (BOG) were fabricated using Be focused ion beam (FIB) implantation. The process is based on the effect wherein the compositional disordering of Si doped MQW is suppressed by Be ion implantation and subsequent annealing. The proposed process is very simple and does not require any lithographic procedure. It is confirmed that the fabricated laser acts as an index-guided laser. This technique is a promising new step toward optoelectronic integrated circuits.