The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD
复制标题
MOCVD 背照式 AlGaN 日盲紫外光电探测器的 AlN 模板的优化生长
DOI：
10.1039/c8tc00755a
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发表时间：
2018
影响因子：
6.4
通讯作者：
Song Hang
中科院分区：
文献类型：
--
作者：
Chen Yiren;Zhang Zhiwei;Jiang Hong;Li Zhiming;Miao Guoqing;Song Hang
本文首先采用金属有机物化学气相沉积（MOCVD）方法制备了具有不同中间相AlN（MT-AlN）层间沉积周期的AlN模板。研究了MT-AlN中间层对AlN模板结晶质量的影响。结果表明，MT-AlN中间层起到了提供应变梯度的作用，使AlN沿着生长方向的应变得以释放。通过在HT-AlN生长过程中引入一次MT-AlN中间层周期，可以极大地优化AlN模板的结晶质量、表面形貌和残余压应力。在此基础上，进一步设计、生长并制备了PIN结构背照式AlGaN基日盲紫外光电探测器。SUV-PD具有较低的暗电流密度，带通光谱响应度在271 nm处的峰值为0.15 A W−1，对应于高达68.8%的EQE，响应速度为6.5 ns。这些结果强烈地反映了基于普通生长方法通过插入MT-AlN中间层制备的AlN模板的高质量。
In this paper, AlN templates with different mesothermal AlN (MT-AlN) interlayer deposition cycles are prepared via metal–organic chemical vapor deposition (MOCVD) at first. The influence of the MT-AlN interlayer on the crystalline quality of AlN templates has been carefully investigated. The results show that the MT-AlN interlayer played the role of providing a strain gradient to release the strain from AlN along the growth direction. The crystalline quality, surface morphology and residual compressive stress of AlN templates can be greatly optimized through introducing one MT-AlN interlayer cycle during the growth of HT-AlN. And then, a PIN structure back-illuminated AlGaN-based solar-blind ultraviolet photodetector (SUV-PD) is further designed, grown and fabricated based on the optimized AlN template. The SUV-PD exhibits a low dark current density, a bandpass spectral responsivity with a peak value of 0.15 A W−1 at 271 nm, corresponding to an EQE as high as 68.8%, and a response speed of 6.5 ns. These results strongly reflect the high quality of AlN templates prepared via inserting a MT-AlN interlayer based on a common growth method.