Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation
Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation
复制标题
热等离子体射流辐照诱导的毫秒退火期间超浅结中 B 和 As 的激活
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
S.Miyazaki
中科院分区：
文献类型：
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作者：
K.Matsumoto;S.Higashi;H.Murakami;S.Miyazaki
