Magnetic properties of transparent SiC:Mn films synthesized on SiC substrates
Magnetic properties of transparent SiC:Mn films synthesized on SiC substrates
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DOI：
10.1016/j.jmmm.2006.10.1110
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发表时间：
2007-03
影响因子：
2.7
通讯作者：
Wenhong Wang;F. Takano;H. Ofuchi;H. Akinaga
中科院分区：
文献类型：
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作者：
Wenhong Wang;F. Takano;H. Ofuchi;H. Akinaga
在 4H-SiC 晶圆上合成透明 SiC:Mn 薄膜，并研究了它们在界面处的磁性和结构特性。研究发现，在通过蚀刻去除了顶部无意合成的第二相的样品中，仍然可以获得清晰的磁滞回线。磁化强度的温度依赖性表明蚀刻样品的居里温度 (Tc) 为 300K。扩展 X 射线吸收精细结构 (EXAFS) 数据分析的进一步结果表明，Mn 仅结合在 4H-SiC 晶格中的间隙位置上。具有光学透明性且具有上述特性的锰掺杂碳化硅 (SiC) 成为自旋电子学发展的可行候选者。
Transparent SiC:Mn films were synthesized on 4H-SiC wafers and their magnetic and structural properties at the interface were investigated. It was found that a clear magnetic hysteresis loop can still be obtained in samples for which the top unintentionally synthesized second phases have been removed by etching. The temperature dependence of magnetization indicates that the etched sample has a Curie temperature (Tc) of 300K. Further results from the extended X-ray absorption fine structure (EXAFS) data analysis suggest that the Mn incorporates solely on the interstitial site in the 4H-SiC lattice. Being optically transparent with the above properties, Mn-doped silicon carbide (SiC) emerges as a viable candidate for the development of spin electronics.