Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy (y ≤ 0.03)
Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy (y ≤ 0.03)
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拉伸应变 Si 和 Si1−yCy (y ≤ 0.03) 中面内电子输运的蒙特卡罗研究
DOI：
10.1051/epjap:1999200
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发表时间：
1999
影响因子：
1
通讯作者：
P. Hesto
中科院分区：
文献类型：
--
作者：
P. Dollfus;S. Galdin;P. Hesto
采用蒙特-卡罗方法对拉伸应变硅基材料的电子输运性质进行了理论分析。本文主要研究Si和Si 1− yCy（y ≤ 0.03）晶体的面内输运性质，这两种晶体分别生长在Si衬底和Si衬底上，并应用于场效应晶体管。与未应变的Si相比，拉伸应变效应被证明是非常有吸引力的Si：漂移迁移率大于3000 cm 2 /Vs，获得在300 K的Ge分数摩尔为0.2的伪衬底。在Si 1− y C y /Si系统中，不需要任何伪衬底，对输运的有益应变效应被合金散射抵消，合金散射对迁移率的影响被研究。如果合金电势大于约1 eV，则在300 K下的稳态输运性能方面，应变诱导的有效质量减少的优点丧失。
Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport in Si and Si 1− y C y ( y ≤ 0.03), grown respectively on 〈001〉 Si 1− x Ge x pseudo-substrate and Si substrate, with a view to Field-Effect-Transistor application. In comparison with unstrained Si, the tensile strain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm 2 /Vs are obtained at 300 K for a Ge fraction mole of 0.2 in the pseudo-substrate. In the Si 1− y C y /Si system, that does not need any pseudo-substrate, the beneficial strain effect on transport is counterbalanced by the alloy scattering whose influence on mobility is studied. If the alloy potential is greater than about 1 eV, the advantage of strain-induced reduction of effective mass is lost in terms of stationary transport performance at 300 K.