Different electronic transport regimes in the quasi‐two‐dimensional organic conductors κ‐(BEDT‐TTF)2X
Different electronic transport regimes in the quasi‐two‐dimensional organic conductors κ‐(BEDT‐TTF)2X
复制标题
准二维有机导体κ-(BEDT-TTF)2X中不同的电子传输机制
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
J. Schlueter
中科院分区：
文献类型：
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作者：
J. Müller;J. Brandenburg;D. Schweitzer;J. Schlueter
利用涨落（噪声）光谱研究了准二维有机电荷转移盐κ‐（BEDT‐TTF）2X中相关载流子的低频动力学性质。在Mott金属-绝缘体过渡的临界端点附近，1/f -噪声水平的显著增加伴随着谱权向低频的大量移动，表明电荷波动的时间尺度突然增加。对于相关性较低、金属含量较高的材料，我们发现了从高温下多或少局域载流子的跳变输运到低温状态的交叉/转变，在低温状态下，层间的金属耦合允许局域电子的层间相干输运。
We study the low‐frequency dynamical properties of correlated charge carriers in various of the quasi‐two‐dimensional organic charge‐transfer salts κ‐(BEDT‐TTF)2X by means of fluctuation (noise) spectroscopy. Close to the critical endpoint of the Mott metal‐insulator transition, a pronounced increase of the 1/f‐noise level accompanied by a substantial shift of spectral weight to low frequencies indicates a sudden increase of the time scale of the charge fluctuations. For the less correlated, more metallic materials, we find a crossover/transition from hopping transport of more‐or‐less localized carriers at elevated temperatures to a low‐temperature regime, where a metallic coupling of the layers allows for coherent interlayer transport of delocalized electrons.