Characterization of radio frequency sputtered SixGe1-xOy thin films for uncooled micro-bolometer
Characterization of radio frequency sputtered SixGe1-xOy thin films for uncooled micro-bolometer
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用于非冷却微测辐射热计的射频溅射 SixGe1-xOy 薄膜的表征
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
M. Almasri
中科院分区：
文献类型：
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作者：
Q. Cheng;M. Almasri
采用射频磁控溅射技术，在氧气和氩气环境中，用硅和锗靶共溅射，在玻璃、硅和SiO2衬底上制备了SixGe_（1-x）Oy薄膜。硅百分比从约7%变化到22%。通过XRD/EDS分析确定了各组分的含量，并对非晶态化合物的电学性能进行了研究。在特定的条件下获得了高的电阻温度系数。使用Si0.177Ge0.726O0.097（在400 ℃下沉积的膜）在室温下获得的最高TCR为（5.8%/K）。在该样品上测量的电阻率为14.6 Ω cm。
Thin film SixGe1-xOy were deposited on glass, silicon and SiO2 by RF magnetron sputtering using co-sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon percentage was varied from ~7% to 22%. Exact contents of each material were determined by XRD/EDS and electrical properties of amorphous compound were studied. High values of temperature coefficient of resistance were obtained in specific conditions. the highest achieved TCR at room temperature was (5.8%/K) using Si0.177Ge0.726O0.097 (film deposited at 400 °C). The measured resistivity on this sample was 14.6 Ω cm.