Heteroepitaxial growth of nanostructured cerium dioxide thin films by MOCVD on a (001) TiO2 substrate
Heteroepitaxial growth of nanostructured cerium dioxide thin films by MOCVD on a (001) TiO2 substrate
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DOI：
10.1021/cm021348r
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发表时间：
2003-03
影响因子：
8.6
通讯作者：
R. Nigro;R. Toro;G. Malandrino;I. Fragalà
中科院分区：
文献类型：
--
作者：
R. Nigro;R. Toro;G. Malandrino;I. Fragalà
The deposition of epitaxial CeO2 nanostructured thin films on rutile (TiO2) substrates by metal−organic chemical vapor deposition (MOCVD) has been carried out in a wide temperature range. Films have been grown on (001)TiO2 from the Ce(III) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato diglyme adduct (Ce(hfa)3·diglyme). The X-ray diffraction patterns of all samples grown in the 450−750 °C deposition temperature range point to the formation of 〈100〉-oriented CeO2 films, whereas at higher deposition temperatures (850−1050 °C) all the deposited CeO2 films show 〈111〉 texture. fwhm rocking curves values clearly indicate that the texturing of CeO2 crystallites is greatly improved upon increasing the deposition temperature in both cases. Typical pole figure patterns demonstrate a cube-on-cube epitaxial growth in the case of 〈100〉-oriented CeO2 films, whereas 〈111〉-oriented CeO2 films show different in-plane alignments of the crystallites. A possible explanation for textural changes is proposed.
