A surface kinetics model for the growth of Si1−xGex films from SiH4/GeH4 mixtures
A surface kinetics model for the growth of Si1−xGex films from SiH4/GeH4 mixtures
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SiH4/GeH4 混合物生长 Si1−xGex 薄膜的表面动力学模型
DOI：
10.1063/1.352958
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发表时间：
1993
影响因子：
3.2
通讯作者：
W. Breiland
中科院分区：
文献类型：
--
作者：
N. Russell;W. Breiland
已经开发出一种模型，可以半定量地描述在没有气相化学的情况下在很宽的温度范围内 Si1−xGex 合金沉积的动力学。该模型的显着特征是，锗烷和硅烷沉积的动力学被视为并行过程，每个过程都有一个串联的吸附步骤和氢解吸步骤。这两个过程通过吸附过程中位点的竞争以及表面上硅和氢化锗之间的快速平衡而耦合。该模型与最近文献中提供的数据相匹配并进行了比较。
A model has been developed that semiquantitatively describes the kinetics of Si1−xGex alloy deposition over a wide range of temperatures in the absence of gas‐phase chemistry. The salient feature of the model is that the kinetics of germane and silane deposition are treated as parallel processes, each with an adsorption step in series with a hydrogen desorption step. The two processes are coupled by competition for sites in the adsorption process, and fast equilibration between silicon and germanium hydride on the surface. The model is fit to, and compared with, data available in the recent literature.