Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder
Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder
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使用含有铜纳米粉末的分子前体溶液将铜嵌入硅基板的亚微米沟槽中
DOI：
10.1016/j.matlet.2016.06.123
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发表时间：
2016
影响因子：
3
通讯作者：
Mitsunobu Sato
中科院分区：
文献类型：
--
作者：
Hiroki Nagai;Tatsuya Suzuki;Takayuki Nakano;Mitsunobu Sato
通过在管式炉中在1.5 L min-1的Ar流下在350 °C下热处理混合前体30 min，将金属铜完全嵌入沟槽（0.2-1.0 µm宽和5.0 µm深）中。在热处理之前，使用含有EDTA配体的Cu（II）络合物的二丁基铵盐、丙胺的Cu（II）络合物和Cu纳米粉末（20-40 nm）的乙醇溶液填充沟槽。在超声辐照下将具有沟槽的Si衬底浸入该前体溶液中，然后从溶液中缓慢取出。重复浸涂和热处理步骤。经处理的衬底的横截面FE-SEM图像表明，在前体溶液的两次热处理之后，嵌入的铜填充沟槽而没有空隙。在相同条件下沉积的没有沟槽的Si衬底上的所得膜的XRD图案表明，嵌入的组分主要由铜组成，Cu 2 O作为次要产物。使用四探针法，发现所得膜（300 nm厚）的电阻率为3.8（5）×10−5Ω cm。
Metallic copper was completely embedded in the trenches (0.2–1.0 µm wide and 5.0 µm deep) by heat-treating a mixed precursor at 350 °C for 30 min under an Ar flow of 1.5 L min–1in a tubular furnace. An ethanol solution containing a dibutylammonium salt of a Cu(II) complex of EDTA ligand, a Cu(II) complex of propylamine, and the Cu nano-powder (20–40 nm) was used to fill the trenches before the heat treatment. Si substrates with the trenches were immersed in this precursor solution under ultrasonic irradiation, and then slowly withdrawn from the solution. The dip coating and heat treatment steps were repeated. The cross-section FE-SEM images of the treated substrate indicate that the embedded copper after two heat treatments of the precursor solution filled the trenches without voids. The XRD pattern of the resulting film on the Si substrate without trenches deposited under identical conditions suggests that the embedded components mainly consisted of copper with Cu2O as a minor product. Using the four probe method, the electrical resistivity of this resulting film (300 nm thick) was found to be 3.8(5)×10−5Ω cm.