Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
复制标题
金属有机化学气相沉积生长的良好排列的锌掺杂 InN 纳米棒和掺杂剂分布
DOI：
10.1021/cg900053h
复制
发表时间：
2009-06
影响因子：
3.8
通讯作者：
Liu, Xianglin
中科院分区：
文献类型：
--
作者：
Guo, Yan;Wang, Zhanguo;Zhang, Riqing;Wei, Hongyuan;Song, Huaping;Yang, Anli;Zhu, Qinsheng;Yang, Shaoyan;Zheng, Gaolin;Liu, Xianglin
报道了金属-有机化学气相沉积法制备锌掺杂InN纳米棒的方法。电子显微镜图像显示，InN纳米棒为单晶结构，垂直排列良好。能量色散X射线
We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray