Reduced Thermal Conductivity in Silicon Thin-Films via Vacancies
Reduced Thermal Conductivity in Silicon Thin-Films via Vacancies
复制标题
通过空位降低硅薄膜的热导率
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
N. Bennett
中科院分区：
文献类型：
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作者：
N. Wight;N. Bennett
定义了一种实验方法，与对照样品相比，将Si膜中的热导率降低了约90%，同时保持热电功率因数几乎不变。这是通过高能量自注入Si，然后快速热退火来创建富空位膜来完成的。TCAD模拟表明，这种方法是可扩展的应用在薄膜热电发电机，作为替代更昂贵和地球上丰富的材料，如碲化铋。这种硅热电器件的方法可以直接扩大到薄膜器件尺寸，这对于用于降低硅热导率的其他方法来说是一个重大挑战。
An experimental method is defined that reduces the thermal conductivity in Si films by ~90 % compared to control samples, while keeping the thermoelectric power factor almost unchanged. This is done by creating vacancy-rich films via high-energy self-implantation of Si, followed by rapid-thermal annealing. TCAD simulations suggest that this approach is scalable for application in thin-film thermoelectric generators, as an alternative to more expensive and less Earth-abundant materials such as bismuth telluride. This approach to Si thermoelectrics could be straight-forward for scale-up to thin-film device dimensions, something that is a major challenge for other methods used for Si thermal conductivity reduction.