Robust low-energy Andreev bound states in semiconductor-superconductor structures: Importance of partial separation of component Majorana bound states
Robust low-energy Andreev bound states in semiconductor-superconductor structures: Importance of partial separation of component Majorana bound states
复制标题
半导体超导体结构中鲁棒的低能安德烈夫束缚态:马约拉纳束缚态部分分离的重要性
DOI:
10.1103/physrevb.100.155429
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发表时间:
2018
影响因子:
3.7
通讯作者:
S. Tewari
中科院分区:
文献类型:
--
作者:
T. Stanescu;S. Tewari
Robust topologically-trivial low-energy Andreev bound states (ABSs) induced by position-dependent effective potentials have recently come under renewed focus in light of a remarkable set of recent experiments observing robust quantized zero bias conductance plateaus in semiconductor-superconductor (SM-SC) heterostructures. We clarify the mechanisms for the formation of such states in SM-SC hybrid nanowires under the application of a parallel magnetic field. Specifically, we show that, (1) the partial spatial separation of the wave functions of the component Majorana bound states (MBSs) is crucial for the creation and robustness of topologically trivial near-zero-energy ABSs, (2) this partial separation can be induced by monotonic smooth confinement potentials or by non-monotonic valley or hill potentials, which can be induced by potential gates or by a position-dependent work function difference, (3) the signs of the spin polarizations of the component MBSs can be either the same or opposite, depending on the profile of the inducing potential, (4) these spin polarizations do not play a fundamental role in generating vastly different coupling strengths to local probes and/or ensuring the robustness of the near-zero-energy ABS, and hence, in contrast to the claims in a recent theoretical work (Ref. [51]) (5) a robust, quantized, zero bias conductance plateau of height 2e^2/h measured in the topologically trivial regime necessarily requires partially separated ABSs (ps-ABSs), independent of the relative signs of the spin-polarizations.
影响因子:
8.6
作者:
Bagrets, Dmitry;Altland, Alexander
通讯作者:
Altland, Alexander