Initial decomposition of GaAs during rapid thermal annealing
Initial decomposition of GaAs during rapid thermal annealing
复制标题
快速热退火过程中 GaAs 的初始分解
DOI：
10.1063/1.97562
复制
发表时间：
1986
影响因子：
4
通讯作者：
S. T. Picraux
中科院分区：
文献类型：
--
作者：
T. E. Haynes;W. Chu;T. L. Aselage;S. T. Picraux
在快速热退火（RTA）过程中，开发了一种直接定量测量从未封盖的GaAs表面蒸发的Ga和As量的技术。该方法包括在附近的铜膜上收集蒸发的分子，然后使用5mev卢瑟福后向散射对铜膜进行成分分析。我们在600-725°C的温度范围内测量了未封盖的GaAs表面在RTA过程中的蒸发速率，发现它们与从Ga和As的平衡蒸汽压的可用测量值预测的速率基本一致。
A technique has been developed for direct, quantitative measurement of the amount of Ga and As evaporated from uncapped GaAs surfaces during rapid thermal annealing (RTA). The method involves collection of the evaporated molecules on a nearby copper film, followed by compositional analysis of the copper film using 5 MeV Rutherford backscattering. We have measured the rates of evaporation from uncapped GaAs surfaces during RTA in the temperature range 600–725 °C and found them to be in reasonable agreement with rates predicted from available measurements of the equilibrium vapor pressures of Ga and As.