Controlled Synthesis of In 2 O 3 Octahedrons and Nanowires
Controlled Synthesis of In 2 O 3 Octahedrons and Nanowires
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DOI：
10.1021/cg050103z
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发表时间：
2005-05
影响因子：
3.8
通讯作者：
Y. Hao;G. Meng;C. Ye;Lide Zhang
中科院分区：
文献类型：
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作者：
Y. Hao;G. Meng;C. Ye;Lide Zhang
通过选择合适的源材料和控制合适的外部条件，采用化学气相沉积法（CVD）合成了氧化铟（In2O3）八面体和纳米线。详细分析了In2O3八面体和纳米线的生长机理，在此基础上提出了不同形貌In2O3单晶纳米结构的生长模型。不同源材料的蒸气压、中心加热区和产物沉积区之间的温差、反应时间和表面能都对In2O3纳米结构的最终结晶形态负责。所获得的结果不仅有助于探索制备各种纳米结构的新方法，而且有助于更深入地了解CVD方法的基本物理和化学过程。
Indium oxide (In2O3) octahedrons and nanowires were synthesized by chemical vapor deposition (CVD) through selecting appropriate source materials and controlling proper external conditions. The growth mechanisms of In2O3 octahedrons and nanowires were analyzed in detail, based on which growth model of single-crystalline In2O3 nanostructures with different morphologies was proposed. The vapor pressures of different source materials, the temperature difference between the central heating zones and the product deposition zones, the reaction time, and the surface energies are all responsible for the final crystalline morphologies of the In2O3 nanostructures. The acquired results may facilitate not only the exploration of new approaches of preparing various nanostructures for potential technical application but also a deeper understanding of the fundamental physical and chemical processes of CVD methods.