Improved Performance for Thermally Evaporated Perovskite Light-Emitting Devices via Defect Passivation and Carrier Regulation
Improved Performance for Thermally Evaporated Perovskite Light-Emitting Devices via Defect Passivation and Carrier Regulation
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通过缺陷钝化和载流子调节提高热蒸发钙钛矿发光器件的性能
DOI：
10.1021/acsami.0c01173
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发表时间：
2020-04-01
影响因子：
9.5
通讯作者：
Bi, Wengang
中科院分区：
文献类型：
--
作者：
Jia, Kuifeng;Song, Li;Bi, Wengang
通过引入超薄 2-苯乙胺溴化物中间层，实现了具有真空沉积 CsPbBr3 发射层的高效无机钙钛矿发光器件 (PeLED)。 PEA(+)阳离子不仅通过终止于CsPbBr3表面来钝化非辐射缺陷，而且还调节电荷传输以平衡空穴和电子传输。因此，PeLED 的性能显着提升，开启电压为 3 V，最大电流效率为 14.64 cd A(-1)，外量子效率为 4.10%。我们的工作将为通过关注钙钛矿层和载流子传输层之间的界面改性来实现基于真空处理方法的高效PeLED提供指导性指导。
Efficient inorganic perovskite light-emitting devices (PeLEDs) with a vacuum-deposited CsPbBr3 emission layer were realized by introducing an ultrathin 2-phenylethanamine bromide interlayer. The PEA(+) cations not only passivated the nonradiative defects by terminating on the CsPbBr3 surface but also regulated the charge transport to balance the hole and electron transport. Consequently, the PeLEDs exhibit significantly promoted performance with a turn-on voltage of 3 V, a maximum current efficiency of 14.64 cd A(-1), and an external quantum efficiency of 4.10%. Our work would provide instructive guidance for realizing efficient PeLEDs based on a vacuum processing method via focusing on the interface modification between the perovskite layer and the carrier transport layer.