Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments.
Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments.
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DOI：
10.1039/c5nr02953h
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发表时间：
2015-07
期刊：
影响因子：
6.7
通讯作者：
Jiandong Yao;J. Shao;Yingxin Wang;Ziran Zhao;Guowei Yang
中科院分区：
文献类型：
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作者：
Jiandong Yao;J. Shao;Yingxin Wang;Ziran Zhao;Guowei Yang
宽带光电探测是包括成像、传感和光通信在内的各种技术应用的核心。拓扑绝缘体（TI）由于其类Dirac-like表面态，在理论上被认为是从红外到太赫兹波段的宽带光电探测材料。在这里，我们报告了一个垂直结构的超宽带光电探测器的基础上的TI Bi 2 Te 3-Si异质结构。该器件具有良好的重现性，从紫外（370.6 nm）到太赫兹（118 μm）的室温光电检测。在偏置条件下，可见光响应度达到约100 nm。作为一种自供电光电探测器，它具有极高的灵敏度，接近7.5 × 10（5）cm（2）W（-1），探测率高达2.5 × 10（11）cm Hz（1/2）W（-1）。此外，这种没有任何封装的原型器件在长时间暴露于空气、高能UV照射和酸处理后没有明显的降解。总之，我们证明了基于TI的异质结构对于解决稳定的室温高性能宽带光电探测器的长期困境具有很大的希望。
Broadband photodetection is central to various technological applications including imaging, sensing and optical communications. On account of their Dirac-like surface state, Topological insulators (TIs) are theoretically predicted to be promising candidate materials for broadband photodetection from the infrared to the terahertz. Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi2Te3-Si heterostructure. The device demonstrated room-temperature photodetection from the ultraviolet (370.6 nm) to terahertz (118 μm) with good reproducibility. Under bias conditions, the visible responsivity reaches ca. 1 A W(-1) and the response time is better than 100 ms. As a self-powered photodetector, it exhibits extremely high photosensitivity approaching 7.5 × 10(5) cm(2) W(-1), and decent detectivity as high as 2.5 × 10(11) cm Hz(1/2) W(-1). In addition, such a prototype device without any encapsulation suffers no obvious degradation after long-time exposure to air, high-energy UV illumination and acidic treatment. In summary, we demonstrate that TI-based heterostructures hold great promise for addressing the long lasting predicament of stable room-temperature high-performance broadband photodetectors.