Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
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DOI：
10.4028/www.scientific.net/msf.527-529.971
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发表时间：
2006-10
期刊：
影响因子：
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通讯作者：
H. Yano;T. Hatayama;Y. Uraoka;T. Fuyuki
中科院分区：
文献类型：
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作者：
H. Yano;T. Hatayama;Y. Uraoka;T. Fuyuki
由于在MOS界面处不存在碳，所以沉积的氧化物是有吸引力的栅极氧化物。我们制作并表征了Si面4 H-SiC n-MOS电容器和n沟道MOSFET，CVD氧化物在1250°C的NO中退火，并与干法热氧化物进行了比较。用二次离子西姆斯）分析了氧化物中氮和碳的分布。与Dry/NO样品相比，CVD/NO样品在导带边缘附近具有较低的界面态密度，较高的界面氮浓度和较低的氧化物中碳浓度。CVD/NO样品的沟道迁移率为27.7cm2/Vs，高于Dry/NO样品的24.9cm2/Vs。这些MOSFET的性能与n-MOS电容和西姆斯测量的结果相关。
Deposited oxide is an attractive gate oxide due to absence of carbon at the MOS interface. We fabricated and characterized Si-face 4H-SiC n-MOS capacitors and n-channel MOSFETs with CVD oxide annealed in NO at 1250°C and compared to those with dry thermal oxide. Nitrogen and carbon distribution in the oxide was evaluated by SIMS. The CVD/NO sample has lower interface state density near the conduction band edge, higher nitrogen concentration at the interface and lower carbon concentration in the oxide than the Dry/NO sample. Channel mobility of 27.7cm 2 /Vs was obtained for the CVD/NO sample, which is higher than the Dry/NO sample (24.9cm 2 /Vs). These MOSFET performances are correlated with the results of n-MOS capacitors and SIMS measurements.