High temperature growth of AlN film by LP-HVPE
High temperature growth of AlN film by LP-HVPE
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DOI：
10.1002/pssc.200674814
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
K. Tsujisawa;S. Kishino;Yuhuai Liu;H. Miyake;K. Hiramatsu;T. Shibata;Mutsuhiro Tanaka
中科院分区：
文献类型：
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作者：
K. Tsujisawa;S. Kishino;Yuhuai Liu;H. Miyake;K. Hiramatsu;T. Shibata;Mutsuhiro Tanaka
采用低压氢化物气相外延法（LP-HVPE）在AlN/蓝宝石模板上于1400-1500 °C生长AlN薄膜。与1200 °C下以2.1 μm/h的生长速率分步流动生长的AlN薄膜相比，在1400-1500 °C下以较高的生长速率获得了具有原子台阶的AlN薄膜。对于在1450 °C下以14.3 μm/h的生长速率生长的AlN膜，RMS值为0.75 nm，（0002）和（10-12）X射线摇摆曲线（XRC）的半高宽值分别为351和781 arcsec。由于AlN/蓝宝石模板的（10-12）XRC的FWHM值为1492 arcsec，因此与AlN/蓝宝石模板相比，HVPE生长的AlN的晶体质量大大改善，这也通过TEM观察证实。（© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
AlN films were grown on AlN/sapphire templates at 1400–1500 °C using low-pressure hydride vapor phase epitaxy (LP-HVPE). Compared to the step-flow growth of AlN film at 1200 °C with growth rate of 2.1 μm/h, AlN films with atomic steps were obtained at 1400–1500 °C even with high growth rate. For the AlN film grown at 1450 °C with growth rate of 14.3 μm/h, the RMS value is 0.75 nm and the FWHM values of (0002) and (10-12) X-ray rocking curve (XRC) are 351 and 781 arcsec, respectively. Since the FWHM value of (10-12) XRC for the AlN/sapphire template is 1492 arcsec, the crystal quality of HVPE-grown AlN is greatly improved compared with the AlN/sapphire template, which is also confirmed by TEM observation. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)