Transferred-electron induced current instabilities in heterojunction bipolar transistors
Transferred-electron induced current instabilities in heterojunction bipolar transistors
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异质结双极晶体管中的转移电子感应电流不稳定性
DOI：
10.1063/1.113743
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
A. Levi
中科院分区：
文献类型：
--
作者：
V. Posse;B. Jalali;A. Levi
本文研究了Ⅲ-Ⅴ族异质结双极晶体管（HBT）集电极的电流驱动不稳定性。数值模拟表明，在改进的AlGaAs/GaAs HBT中，由于转移电子（Gunn-Hilsum）效应，集电极电流表现出振荡行为。Kirk效应的影响以及振荡的条件进行了讨论。
Current driven instabilities in the collector of III–V heterojunction bipolar transistors (HBT) are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred‐electron (Gunn–Hilsum) effect. Influence of the Kirk effect as well as conditions for oscillation are discussed.