Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs
Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs
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DOI：
10.1109/ted.2012.2196765
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发表时间：
2012-06
影响因子：
3.1
通讯作者：
Abdelkader El Rafei;A. Saleh;R. Sommet;J. Nebus;Raymond Quéré
中科院分区：
文献类型：
--
作者：
Abdelkader El Rafei;A. Saleh;R. Sommet;J. Nebus;Raymond Quéré
本文提出了一种简单而准确的硅锗（SiGe）异质结双极晶体管（HBT）热阻表征方法。该方法依赖于 100 Hz-3 GHz 频率范围内的低频 S 参数测量。结果表明，反馈混合参数 h12 提供了频域中的热阻抗图像，该图像与晶体管的尺寸无关。通过这种方法可以准确确定 SiGe HBT 中涉及的非常短的热时间常数，以及以真正简单的方式确定热阻抗的温度依赖性，因为可以在直流条件下在晶圆或附加芯片上执行电气测量。最后，提取非线性电气等效电路模型，该模型可以很容易地在计算机辅助设计软件中实现，用于任何 SiGe HBT 电路的非线性仿真。
In this paper, a simple and accurate characterization method of the thermal impedance of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is proposed. This method relies on low-frequency S-parameter measurements in the 100 Hz-3 GHz frequency range. It is shown that feedback hybrid parameter h12 provides an image of the thermal impedance in the frequency domain, which is independent of the size of the transistor. Very short thermal time constants involved in SiGe HBTs are accurately determined by this method, as well as the temperature dependence of the thermal impedance in a truly simple way as electrical measurements can be performed in dc conditions either on a wafer or on an attached die. Finally, a nonlinear electrical equivalent circuit model is extracted, which can be readily implemented in computer-aided design software for nonlinear simulation of any SiGe HBT circuit.