Micromagnetic Studies of Lateral TMR Memory Cell Driven by Spin Polarized Current or by Magnetic Field
Micromagnetic Studies of Lateral TMR Memory Cell Driven by Spin Polarized Current or by Magnetic Field
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DOI：
10.1109/tmag.2013.2243901
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发表时间：
2013-07
影响因子：
2.1
通讯作者：
Lei Xu;Yi Wang;D. Wei;Zhongshui Ma
中科院分区：
文献类型：
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作者：
Lei Xu;Yi Wang;D. Wei;Zhongshui Ma
用微磁模拟方法研究了椭圆形三极晶体管存储单元Co70Fe30(PL1)/Ru/Co60Fe20B20(PL2)/MgO/Co60Fe20B20(FL)，在磁场和电流作用下的开关特性。通过在椭圆形三层膜结构的边缘引入降低的饱和磁化强度来理解FL的开关特性。多晶微结构在模拟中也很重要。钉扎层产生的未补偿退磁场会导致磁场反转情况下的R-H回路不对称，在一定条件下，对于自旋极化电流反转情况，会导致R-J回路中的对称开关电流。边缘饱和磁化强度的降低以及晶界和晶界的分离处理是模拟和实验R-H和R-J回线较好吻合的关键因素。
The switching properties of an elliptical TMR memory cell Co70Fe30(PL1)/Ru/Co60Fe20B20(PL2)/MgO/Co60Fe20B20(FL), by magnetic field or by current, are studied with micromagnetic simulation. The switching characteristic of FL is understood by introducing reduced saturation magnetization at the edge of the elliptical trilayer structures. The polycrystalline microstructure is also important in the simulations. The uncompensated demagnetization field generated by the pinned layer can cause asymmetry to the R-H loop of magnetic field reversal case; and under certain conditions, it can lead to the symmetric switching current in the R-J loop for the spin polarized current reversal case. The reduced saturation magnetization at the edge and the separate treating of crystal grains and grain boundaries are essential factors in the good agreement between simulated and experimental R-H and R-J loops.