A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)
A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)
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一种新颖的溅射技术：感应耦合脉冲溅射 (ICIS)
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
A. Ehiasarian
中科院分区：
文献类型：
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作者：
D. Loch;A. Ehiasarian
磁控溅射磁性材料存在场淬灭和合金成分随靶材烧蚀而变化的缺点。消除腔室中的磁场的优点在于，这使得溅射粒子能够更均匀地沿着电场移动。感应耦合脉冲溅射（ICIS）是一种没有磁场的高功率脉冲磁控溅射（HIPIMS）形式，其中高密度等离子体由高功率射频（RF）线圈产生，以便溅射靶并电离金属蒸汽。在这种新兴技术中，功率和压力对电离和沉积过程的影响尚不清楚。该装置包括一个13.56 MHz脉冲RF线圈，占空比为25%。向阴极施加1900 V的脉冲DC电压以吸引氩离子并引发溅射。在恒定压力下，Cu和Ti中性粒子和离子的光发射光谱（OES）显示，峰值RF功率为500 W - 3400 W时，强度呈线性增加，功率为4500 W时，强度急剧下降。氩中性粒子在500 W - 2300 W功率范围内呈线性增加，在2300 W - 4500 W之间强度达到饱和。在2300 W的恒定峰值RF功率下研究了压力对该过程的影响。随着压力的增加，电离度增加。涂层的显微组织在2.95×10−2 mbar下呈球状生长，在1.2×10−1 mbar下呈大晶粒柱状生长。在此压力范围内，宽度为0.360 μm、纵横比为2.5：1的无偏过孔的底部覆盖率从15%增加到20%。目前的工作已经表明，将RF供电线圈与无磁体高压脉冲DC供电阴极相结合的概念是可行的，并且产生非常稳定的等离子体。实验表明，功率和压力对等离子体和涂层的微观结构有显着的影响。
Sputtering magnetic materials with magnetron based systems has the disadvantage of field quenching and variation of alloy composition with target erosion. The advantage of eliminating magnetic fields in the chamber is that this enables sputtered particles to move along the electric field more uniformly. Inductively coupled impulse sputtering (ICIS) is a form of high power impulse magnetron sputtering (HIPIMS) without a magnetic field where a high density plasma is produced by a high power radio frequency (RF) coil in order to sputter the target and ionise the metal vapour. In this emerging technology, the effects of power and pressure on the ionisation and deposition process are not known. The setup comprises of a 13.56 MHz pulsed RF coil pulsed with a duty cycle of 25 %. A pulsed DC voltage of 1900 V was applied to the cathode to attract Argon ions and initiate sputtering. Optical emission spectra (OES) for Cu and Ti neutrals and ions at constant pressure show a linear intensity increase for peak RF powers of 500 W – 3400 W and a steep drop of intensity for a power of 4500 W. Argon neutrals show a linear increase for powers of 500 W – 2300 W and a saturation of intensity between 2300 W – 4500 W. The influence of pressure on the process was studied at a constant peak RF power of 2300 W. With increasing pressure the ionisation degree increased. The microstructure of the coatings shows globular growth at 2.95×10−2 mbar and large-grain columnar growth at 1.2×10−1 mbar. Bottom coverage of unbiased vias with a width of 0.360 μm and aspect ratio of 2.5:1 increased from 15 % to 20 % for this pressure range. The current work has shown that the concept of combining a RF powered coil with a magnet-free high voltage pulsed DC powered cathode is feasible and produces very stable plasma. The experiments have shown a significant influence of power and pressure on the plasma and coating microstructure.