On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.
On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.
复制标题
片上的集成，硅 - 石膏等离子体Schottky光电探测器，具有高响应性和雪崩光的光量。
DOI：
10.1021/acs.nanolett.5b05216
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发表时间：
2016-05-11
期刊：
影响因子：
10.8
通讯作者：
Ferrari AC
中科院分区：
文献类型：
--
作者：
Goykhman I;Sassi U;Desiatov B;Mazurski N;Milana S;de Fazio D;Eiden A;Khurgin J;Shappir J;Levy U;Ferrari AC
报道了一种片上集成的金属石墨烯-硅等离子体肖特基光电探测器，在1.55 μm波长处具有85 mA/W的响应度和7%的内量子效率。这比在相同条件下工作的金属硅肖特基光电探测器高一个数量级。在反向偏压为3V时，实现了雪崩倍增，响应度为0.37A/W，雪崩光增益为1.22。这为石墨烯集成硅光子学铺平了道路。
We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.