Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
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DOI：
10.1126/science.1056186
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发表时间：
2001-02-02
期刊：
影响因子：
56.9
通讯作者：
Koinuma, H
中科院分区：
文献类型：
--
作者：
Matsumoto, Y;Murakami, M;Koinuma, H
稀磁性半导体和宽间隙氧化物半导体是磁光器件的理想材料，通过组合筛选方法观察过渡金属在二氧化钛中的固溶性及其磁性，我们报道了在钴浓度为0 ~ 8%的钴掺杂锐钛矿薄膜中观察到透明铁磁性，磁显微镜图像显示薄膜中的磁畴结构。在室温以上，材料仍保持铁磁性，每个钴原子的磁矩为0.32玻尔磁子，薄膜具有导电性，在2开尔文时具有60%的正磁阻。
Dilute magnetic semiconductors and wide gap oxide semiconductors are appealing materials for magnetooptical devices, From a combinatorial screening approach looking at the solid solubility of transition metals in titanium dioxides and of their magnetic properties, we report on the observation of transparent ferromagnetism in cobalt-doped anatase thin films with the concentration of cobalt between 0 and 8%, Magnetic microscopy images reveal a magnetic domain structure in the films, indicating the existence of ferromagnetic long-range ordering, The materials remain ferromagnetic above room temperature with a magnetic moment of 0.32 Bohr magnetons per cobalt atom, The film is conductive and exhibits a positive magnetoresistance of 60% at 2 kelvin.