Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls
Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls
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Racetrack存储器：基于磁畴壁的高性能、低成本、非易失性存储器
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
S. Parkin
中科院分区：
文献类型：
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作者：
L. Thomas;See;K. Ryu;Brian P. Hughes;C. Rettner;Ding;Ching;K. Shen;S. Parkin
我们已经演示了赛道存储器的关键组件。特别是，我们已经表明，一系列的DW可以在高速沿着磁性纳米线移动，通过使用纳秒长电流脉冲在平面内和垂直磁化赛道。通过使用垂直磁化的RT，DW之间的间距显著减小。通过优化RT的材料（图11）和缩放跑道宽度，可以实现更高的存储密度。
We have demonstrated the key components of the Racetrack Memory. In particular, we have shown that a series of DWs can be moved at high speed along magnetic nanowires by using nanosecond long current pulses for both in-plane and perpendicularly magnetized racetracks. The spacing between DWs has been reduced significantly by using a perpendicularly magnetized RT. Higher storage densities can be achieved by optimizing the materials of the RT (Fig.11) and by scaling the racetrack width.