Mass transport and thermal stability of TiN/Al2O3/InGaAs nanofilms
Mass transport and thermal stability of TiN/Al2O3/InGaAs nanofilms
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DOI：
10.1063/1.4751435
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发表时间：
2012-09-01
影响因子：
3.2
通讯作者：
Herrera-Gomez, A.
中科院分区：
文献类型：
--
作者：
Ceballos-Sanchez, O.;Sanchez-Martinez, A.;Herrera-Gomez, A.
用角分辨X射线光电子能谱(ARXPS)、高分辨电子显微镜(HRTEM)和密度泛函理论计算研究了在InxGa1-xAs衬底上生长的TiN/Al_2O_3纳米薄膜的结构。从ARXPS的研究中，可以详细地表征组成纳米薄膜的各个层的组成和分布；结果与HRTEM显微照片一致。对ARXPS数据的分析表明，退火导致铟原子从衬底扩散到钛层。它还允许确定介质层的厚度和成分在热处理下保持稳定。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4751435]
The structure of TiN/Al2O3 nanofilms grown on InxGa1-xAs substrates was studied with angle-resolved x-ray photoelectron spectroscopy (ARXPS), high resolution transmission electron microscopy (HRTEM), and density functional theory calculations. From the ARXPS studies, it was possible to characterize in detail the composition and distribution of the various layers constituting the nanofilms; the results were consistent with HRTEM micrographs. The analysis of the ARXPS data showed that annealing causes diffusion of indium atoms from the substrate into the titanium layer. It also allowed for establishing that the thickness and composition of the dielectric layers remain stable under thermal treatments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751435]