Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer
Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer
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DOI：
10.1063/1.4818000
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发表时间：
2013-08
影响因子：
4
通讯作者：
Liang Wang;Jiqu Xu;Shi-Yao Zhu;Yi Huang;P. Lai
中科院分区：
文献类型：
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作者：
Liang Wang;Jiqu Xu;Shi-Yao Zhu;Yi Huang;P. Lai
研究了溅射HfTiON薄膜在硫钝化的GaAs膜上的界面性质和电学性质。实验结果表明，采用HfTiON/Taon叠栅介质在6 0 0℃热处理的GaAs金属氧化物半导体电容器具有较低的界面态密度(1.0×10 12 cm−2 eV−1)、较小的栅漏电流(Vg=VfB+1V时的7.3×10−5 A cm−2)、较小的电容等效厚度(1.6 5 nm)和较大的等效介电常数(2 6.2)。其机理在于，Taon IPL能有效地阻止Hf、Ti和O向GaAs表面的扩散，并抑制界面As-As键、Ga-/As-氧化物的形成，从而解除Taon/GaAs界面的FeMI能级，改善界面质量和器件的电学性能。
The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm−2 eV−1), small gate leakage current (7.3 × 10−5 A cm−2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.