NiFe-Based Nanostructures Fabricated Using an Atomic Force Microscope
NiFe-Based Nanostructures Fabricated Using an Atomic Force Microscope
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使用原子力显微镜制造的 NiFe 基纳米结构
DOI：
10.1143/jjap.39.l1292
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发表时间：
2000
影响因子：
1.5
通讯作者：
J. Shirakashi
中科院分区：
文献类型：
--
作者：
Y. Takemura;J. Shirakashi
在原子力显微镜下，采用射频磁控溅射技术在SiO2/Si衬底上制备了厚度为20 nm的NiFe薄膜。通过对AFM悬臂梁施加脉冲电压，制备了氧化镍的点结构。通过改变施加脉冲偏置的电压或持续时间，点的高度被控制在3.5到14 nm的范围内。点的直径在60 ~ 140 nm之间变化，这与脉冲偏压的持续时间无关。
NiFe thin films of 20 nm thickness deposited by rf magnetron sputtering on SiO2/Si substrates were selectively oxidized using an atomic force microscope (AFM). The dot structures of NiFe-oxide were fabricated by applying a pulse voltage to the AFM cantilever. The height of the dots was controlled in the range from 3.5 to 14 nm by changing the voltage or duration of the applied pulse bias. The diameter of the dots was varied from 60 to 140 nm, which was not strongly dependent on the duration of the pulsed bias.