Valley susceptibility of an interacting two-dimensional electron system
Valley susceptibility of an interacting two-dimensional electron system
复制标题
DOI：
10.1103/physrevlett.97.186404
复制
发表时间：
2006-11-03
影响因子：
8.6
通讯作者：
Shayegan, M.
中科院分区：
文献类型：
--
作者：
Gunawan, O.;Shkolnikov, Y. P.;Shayegan, M.
我们报道了在AlAs二维电子系统中对谷极化率的直接测量，即谷布居对外加对称破缺应变的响应。随着二维密度的降低，谷极化率相对于它的带值急剧增加，反映了系统强烈的电子-电子相互作用。这种增加与自旋磁化率的增加有很大的相似之处，并建立了自旋自由度和谷自由度之间的类比。
We report direct measurements of the valley susceptibility, the change of valley population in response to an applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.