Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.
Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.
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DOI：
10.1021/nl8035756
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发表时间：
2009-03
期刊：
影响因子：
10.8
通讯作者：
Tomohiro Shimizu;Zhang Zhang-Zhang;S. Shingubara;S. Senz;U. Gösele
中科院分区：
文献类型：
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作者：
Tomohiro Shimizu;Zhang Zhang-Zhang;S. Shingubara;S. Senz;U. Gösele
采用两步化学气相沉积法，在阳极氧化铝模板中，在Si（100）衬底上制备了垂直取向的Ge/Si异质结构纳米线阵列。采用正丁基锗烷蒸气代替锗烷作为新的更安全的锗纳米线生长前体。首先，以Au为催化剂，硅烷为硅烷，采用气液固生长机制生长了硅纳米线。第二步是在Si纳米线上生长Ge纳米线。所提出的方法将允许在任意衬底上制备由多种材料组成的外延生长的垂直异质结构纳米线，避免不期望的横向生长。
Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.