Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
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DOI：
10.1007/s11664-013-2871-x
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发表时间：
2014-04-01
影响因子：
2.1
通讯作者：
Traenkle, G.
中科院分区：
文献类型：
--
作者：
Richter, E.;Fleischmann, S.;Traenkle, G.
研究了通过氢化物气相外延在图案化蓝宝石衬底上生长 Al (x) Ga1-x N 层。该图案由蜂窝状结构组成，其取向和尺寸促进了聚结的 c 面取向 Al (x) Ga1-x N 层的形成，并降低了裂纹密度。使用扫描电子显微镜和电子背散射衍射研究了蜂窝开口中寄生微晶的取向。观察到[.0]和[52.3]方向平行于Al0.3Ga0.7N层的垂直生长方向的微晶，并成功地通过20μm厚的完全聚结的c面取向层过度生长。
Growth of Al (x) Ga1-x N layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the formation of coalesced c-plane-oriented Al (x) Ga1-x N layers with reduced crack density. The orientation of parasitic crystallites in the honeycomb openings is investigated using scanning electron microscopy and electron back-scatter diffraction. Crystallites with their [ .0] and [52.3] directions parallel to the vertical growth direction of the Al0.3Ga0.7N layer are observed and successfully overgrown by a 20-mu m-thick fully coalesced c-plane-oriented layer.